SSD 860 EVO M.2 SATA 250GB, Innovative V-NAND Technology with Enhanced Read/Write Performance. 

The SSD you trust

The newest edition to the world's best-selling* SATA SSD series, the Samsung 860 EVO is specially designed to enhance performance of mainstream PCs and laptops. With the latest V-NAND technology, this fast and reliable SSD comes in a wide range of compatible form factors and capacities.

Enhanced performance

Speeds are consistent, even under heavy workloads and multi-tasking allowing for faster file transfer. The 860 EVO performs at sequential read speeds up to 550 MB/s* with Intelligent TurboWrite technology, and sequential write speeds up to 520 MB/s. The TurboWrite buffer size* is upgraded from 12 GB to 78 GB.

Boosted endurance

Up to 8x higher TBW (Terabytes Written)* than the 850 EVO. Feel secure storing and rendering large sized 4K videos and 3D data used by the latest applications. The Samsung 860 EVO with V-NAND technology is backed by a 5-year limited warranty.*

Smart compatibility

Benefit from faster, more fluid communication with your host system. The refined ECC* algorithm and a new MJX controller generate higher speeds, and the improved queued trim enhances Linux compatibility.

Multiple form factors

Whatever size your computer needs, there is an 860 EVO for you. Choose among the 2.5-inch size for desktop PCs and laptops, and the SATA-based M.2 (2280) or the mSATA for ultra-slim computing devices.

Samsung 860 EVO 250 GB M.2 SSD MZ-N6E250BW

₹5,000.00 Regular Price
₹4,500.00Sale Price
Brand
  • Series

    SSD 860 EVO

    Usage Application

    Client PCs

    Interface

    SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface

    Capacity

    250 GB (1 GB=1 Billion byte by IDEMA)
      * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

    Sequential Read Speed

    Up to 550 MB/s Sequential Read
      * Performance may vary based on system hardware & configuration

    Sequential Write Speed

    Up to 520 MB/s Sequential Write
      * Performance may vary based on system hardware & configuration

    Random Read Speed

    Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
      Random Read (4KB, QD1): Up to 10,000 IOPS Random Read
      * Performance may vary based on system hardware & configuration

    Random Write Speed

    Random Write (4KB, QD32): Up to 88,000 IOPS Random Write
      Random Write (4KB, QD1): Up to 42,000 IOPS Random Write
      * Performance may vary based on system hardware & configuration

    Controller

    Samsung MJX Controller

    NAND Type

    Samsung V-NAND 3bit MLC

    Cache Memory

    Samsung 250 GB Low Power DDR4 SDRAM

    Trim Support

    Yes

    AES Encryption

    AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)

    S.M.A.R.T. Support

    Yes

    GC (Garbage Collection)

    Auto Garbage Collection Algorithm

    WWN Support

    World Wide Name supported

    Device Sleep Mode Support

    Yes

    Internal Storage

    Yes

    Power Consumption (W)

    *Average: 2.2 W
      *Maximum: 4.0 W (Burst mode)
      *Actual power consumption may vary depending on system hardware & configuration

    Reliability (MTBF)

    1.5 Million Hours Reliability (MTBF)
     

    Environmental Specs

    Operating Temperature

    0 - 70 ℃ Operating Temperature

    Shock

    1,500G & 0.5ms (Half sine)
  • 3 Year Warranty 

    To Know Service Location : Please Visit : 

    https://www.samsung.com/in/support/service-center/

    Note *

    Price's Features & Specifications : Subject to change without Prior notice.*

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