SSD 860 EVO M.2 SATA 250GB, Innovative V-NAND Technology with Enhanced Read/Write Performance.
The SSD you trust
The newest edition to the world's best-selling* SATA SSD series, the Samsung 860 EVO is specially designed to enhance performance of mainstream PCs and laptops. With the latest V-NAND technology, this fast and reliable SSD comes in a wide range of compatible form factors and capacities.
Speeds are consistent, even under heavy workloads and multi-tasking allowing for faster file transfer. The 860 EVO performs at sequential read speeds up to 550 MB/s* with Intelligent TurboWrite technology, and sequential write speeds up to 520 MB/s. The TurboWrite buffer size* is upgraded from 12 GB to 78 GB.
Up to 8x higher TBW (Terabytes Written)* than the 850 EVO. Feel secure storing and rendering large sized 4K videos and 3D data used by the latest applications. The Samsung 860 EVO with V-NAND technology is backed by a 5-year limited warranty.*
Benefit from faster, more fluid communication with your host system. The refined ECC* algorithm and a new MJX controller generate higher speeds, and the improved queued trim enhances Linux compatibility.
Multiple form factors
Whatever size your computer needs, there is an 860 EVO for you. Choose among the 2.5-inch size for desktop PCs and laptops, and the SATA-based M.2 (2280) or the mSATA for ultra-slim computing devices.
Samsung 860 EVO 250 GB M.2 SSD MZ-N6E250BW
SSD 860 EVO
SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
250 GB (1 GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Sequential Read Speed
Up to 550 MB/s Sequential Read * Performance may vary based on system hardware & configuration
Sequential Write Speed
Up to 520 MB/s Sequential Write * Performance may vary based on system hardware & configuration
Random Read Speed
Random Read (4KB, QD32): Up to 97,000 IOPS Random Read Random Read (4KB, QD1): Up to 10,000 IOPS Random Read * Performance may vary based on system hardware & configuration
Random Write Speed
Random Write (4KB, QD32): Up to 88,000 IOPS Random Write Random Write (4KB, QD1): Up to 42,000 IOPS Random Write * Performance may vary based on system hardware & configuration
Samsung MJX Controller
Samsung V-NAND 3bit MLC
Samsung 250 GB Low Power DDR4 SDRAM
AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
GC (Garbage Collection)
Auto Garbage Collection Algorithm
World Wide Name supported
Device Sleep Mode Support
Power Consumption (W)
*Average: 2.2 W *Maximum: 4.0 W (Burst mode) *Actual power consumption may vary depending on system hardware & configuration
1.5 Million Hours Reliability (MTBF)
0 - 70 ℃ Operating Temperature
1,500G & 0.5ms (Half sine)
3 Year Warranty
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Price's Features & Specifications : Subject to change without Prior notice.*